Multi-depth film for optical devices

ABSTRACT

Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Patent ApplicationSer. No. 62/832,752, filed Apr. 11, 2019, which is herein incorporatedby reference.

BACKGROUND Field

Embodiments of the present disclosure generally relate to opticaldevices. More specifically, embodiments described herein provide for theformation of multi-depth films for the fabrication of optical devices.

Description of the Related Art

Optical devices may be used to manipulate the propagation of light byspatially varying structural parameters (e.g., shape, size, orientation)of structures of the optical devices formed on a substrate. The opticaldevices provide a spatially varying optical response that molds opticalwavefronts as desired. These structures of the optical devices alterlight propagation by inducing localized phase discontinuities (i.e.,abrupt changes of phase over a distance smaller than the wavelength ofthe light). These structures may be composed of different types ofmaterials, shapes, or configurations on the substrate and may operatebased upon different physical principles.

Fabricating optical devices requires forming structures from a devicematerial layer disposed on the substrate. However, the desiredproperties of an optical device to be fabricated may necessitatestructures having various depths. Accordingly, what is needed in the artare methods for forming multi-depth films for the fabrication of opticaldevices.

SUMMARY

In one embodiment, a method is provided. The method includes disposing abase layer of a device material on a surface of a substrate. The baselayer has a base layer depth. One or more mandrels of the devicematerial are disposed on the base layer. The disposing the one or moremandrels includes positioning a mask over of the base layer. The maskhas a first portion of a pattern of slots having a first masked depthand a second portion of the pattern of slots having a second maskeddepth. The first masked depth corresponds to mandrels having a firstmandrel depth, and the second masked depth corresponds to mandrelshaving a second mandrel depth. The device material is deposited with themask positioned over the base layer to form an optical device having thebase layer with the base layer depth and the one or more mandrels havingthe first mandrel depth and the second mandrel depth.

In another embodiment, a method is provided. The method includesdisposing a base layer of a device material on a surface of a substrate.The base layer has a base layer depth. One or more mandrels of thedevice material are disposed on the base layer. The disposing the one ormore mandrels includes positioning a first mask over of the base layerand positioning a second mask over of the first mask. The first mask hasa first pattern of slots having a first masked depth. The first maskeddepth corresponds to mandrels having a first mandrel depth. The secondmask has a second pattern of slots having a second masked depth. Thesecond masked depth corresponds to mandrels having a second mandreldepth. The device material is deposited with the first mask and secondmask positioned over the base layer to form an optical device having thebase layer with the base layer depth and the one or more mandrels havingthe first mandrel depth and the second mandrel depth.

In yet another embodiment, a method is provided. The method includesdisposing a base layer of a device material on a surface of a substrate.The base layer has a base layer depth. A first patterned photoresist isdisposed over the base layer. The first patterned photoresist has firstopenings and a first thickness corresponding to a first mandrel depth.The device material is deposited over the first patterned photoresist.The first patterned photoresist is removed to form one or more mandrelshaving the first mandrel depth. A second patterned photoresist isdisposed over the base layer and the one or more mandrels having thefirst mandrel depth. The second patterned photoresist has secondopenings and a second thickness corresponding to a second mandrel depth.The device material is deposited over the second patterned photoresist.The second patterned photoresist is removed to form the one or moremandrels having the first mandrel depth and the second mandrel depth.

In another embodiment, a processing system comprises: a factoryinterface; a first actuator disposed within the factory interface; asecond actuator disposed within the factory interface; an alignerstation disposed within the factory interface; and a flipper devicecoupled to the factory interface.

In another embodiment, a method of assembling a carrier assemblycomprises: inserting a carrier having a mask thereon into an alignmentstation; aligning the carrier and mask; separating the mask from thecarrier; removing the carrier from the alignment station; inserting asubstrate into the alignment station; contacting the substrate to themask; and contacting the carrier to the substrate and mask to create acarrier assembly.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, and may admit to other equally effective embodiments.

FIG. 1 is a flow diagram of a method for forming a multi-depth filmaccording to an embodiment.

FIGS. 2A and 2B are schematic, cross-sectional views of a substrateduring a method for forming a multi-depth film according to anembodiment.

FIGS. 3A and 3B are schematic, cross-sectional views of a substratepositioned in a chamber during a method for forming a multi-depth filmaccording to an embodiment.

FIG. 3C is a schematic, top view of a first mask according to anembodiment.

FIG. 3D is a schematic, top view of a second mask according to anembodiment.

FIG. 4 is a flow diagram of a method for forming a multi-depth filmaccording to an embodiment.

FIGS. 5A-5C are schematic, cross-sectional views of a substrate during amethod for forming a multi-depth film according to an embodiment.

FIG. 6 is a cross-sectional view of a carrier assembly according to oneembodiment.

FIGS. 7A and 7B are a schematic, top view of a processing system andoffline build tool according to one embodiment.

FIGS. 8A and 8B are a schematic, cross-sectional view of loaded frontopening unified pods according to one embodiment.

FIGS. 9A-9F are schematic, cross-sectional views of the build tool inFIG. 7B at various stages of operation.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Embodiments of the present disclosure relate to forming multi-depthfilms for the fabrication of optical devices. FIG. 1 is a flow diagramof a method 100 for forming a multi-depth film 200. FIGS. 2A and 2B areschematic, cross-sectional views of a substrate 201 during the method100 for forming the multi-depth film 200.

At operation 101, as shown in FIG. 2A, a base layer 202 of devicematerial is disposed on a surface 203 of a substrate 201. The substrate201 may also be selected to transmit a suitable amount of light of adesired wavelength or wavelength range, such as one or more wavelengthsin the infrared region to UV region (i.e., from about 700 to about 1500nanometers). Without limitation, in some embodiments, the substrate 201is configured such that the substrate 201 transmits greater than orequal to about 50%, 60%, 70%, 80%, 90%, 95%, 99%, to UV region of thelight spectrum. The substrate 201 may be formed from any suitablematerial, provided that the substrate 201 can adequately transmit lightin a desired wavelength or wavelength range and can serve as an adequatesupport for the optical devices. In some embodiments, which can becombined with other embodiments described herein, the material ofsubstrate 201 has a refractive index that is relatively low, as comparedto the refractive index of the device material. Substrate selection mayinclude substrates of any suitable material, including, but not limitedto, amorphous dielectrics, crystalline dielectrics, silicon oxide,polymers, and combinations thereof. In some embodiments, which can becombined with other embodiments described herein, the substrate 201includes a transparent material. In one embodiment, which can becombined with other embodiments described herein, the substrate 201 istransparent with absorption coefficient smaller than 0.001. Suitableexamples may include an oxide, sulfide, phosphide, telluride orcombinations thereof.

In one embodiment, which can be combined with other embodimentsdescribed herein, disposing the base layer 202 of device material overthe surface 203 of the substrate 201 includes, but is not limited to,one or more of a liquid material pour casting process, a spin-on coatingprocess, a liquid spray coating process, a dry powder coating process, ascreen printing process, a doctor blading process, a physical vapordeposition (PVD) process, a chemical vapor deposition (CVD) process, aplasma-enhanced (PECVD) process, a flowable CVD (FCVD) process, and anatomic layer deposition (ALD) process. In another embodiment, which canbe combined with other embodiments described herein, the material layerincludes, but is not limited to, titanium dioxide (TiO₂), zinc oxide(ZnO), tin dioxide (SnO₂), aluminum-doped zinc oxide (AZO),fluorine-doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), zincstannate (tin oxide) (SnZnQ3), silicon nitride (Si3N4), and amorphoussilicon (a-Si) containing materials. The base layer 202 has a base layerthickness 204 from the base layer 202 to the surface 203 of thesubstrate 201.

At operation 102, as shown in FIG. 2B, one or more mandrels 208 ofdevice material are disposed on the base layer 202 to form themulti-depth film 200. In one embodiment, which can be combined withother embodiments described herein, operation 102, as shown in FIG. 3A,includes positioning a mask 301, such as a shadow mask, over thesubstrate 201 and depositing the device material. Depositing the devicematerial may include, but is not limited to, one or more of a PVDprocess, a CVD process, a PECVD process, a FCVD process, or an ALDprocess. The depositing the device material may be performed in adeposition chamber operable under vacuum pressure.

The mask 301 includes a pattern of slots 302 disposed through the mask301. A first portion 304 of the pattern of slots 302 has a first maskeddepth 308 and a second portion 306 of the pattern of slots 302 has asecond masked depth 310. The first portion 304 of the pattern of slots302 having the first masked depth 308 forms one or more mandrels 208having a first mandrel depth 210. The first mandrel depth 210 is adistance from a top surface 212 of the mandrels 208 having the firstmandrel depth 210 to the base layer 202. The second portion 306 of thepattern of slots 302 having the second masked depth 310 forms one ormore mandrels 208 having a second mandrel depth 211. The second mandreldepth 211 is a distance from a top surface 214 of the mandrels 208having the second mandrel depth 211 to the base layer 202. As shown inFIG. 2B, the multi-depth film 200 includes the base layer 202 having thebase layer thickness 204 and one or more mandrels 208 having the firstmandrel depth 210 and the second mandrel depth 211. In one embodiment,which can be combined with other embodiments described herein, themulti-depth film 200 includes alignment marks (not shown) formed thereonfor further processing, such as for patterning and/or etching themulti-depth film 200 to form structures of the device material on thesubstrate 201.

In one embodiment, which can be combined with other embodimentsdescribed herein, as shown in FIGS. 3A and 3B, the substrate 201 isretained on a substrate support 303. The substrate support 303 includesa clamp ring 305 capable of retaining the substrate 201 on the substratesupport 303 without contacting the base layer 202 and the mandrels 208.In one embodiment, which can be combined with other embodimentsdescribed herein, the mask 301 assembled into the clamp ring 305 andexchanged at intervals based on a rate of accumulation of depositeddevice material changing the dimensions of the windows (e.g. slots 302)in the mask 301.

In another embodiment, which can be combined with other embodimentsdescribed herein, the mask 301 is formed from a substrate sized diskwith an adhesive applied to the outer perimeter of the disk. Thisadhesive allows the substrate 201 to attach to the underside of theclamp ring 305. After the mask 301 has accumulated the maximum tolerabledeposited device material, a heater in the chamber would be heated to atemperature which eliminates the adhesive force of the adhesive,releasing the substrate 201 to be retrieved and exchanged at load lockscoupled to the chamber. In one embodiment, which can be combined withother embodiments described herein, the mask 301 may be loaded into ashutter disk area. A mechanism may attach the mask 301 to the clamp ring305. A release mechanism may release the mask 301 attached to theunderside of the clamp ring 305.

The substrate support 303 is coupled to a stem 307 which extends throughthe chamber body 309. The stem 307 is connected to a lift system (notshown) that moves the substrate support 303 between a processingposition (as shown) and a transfer position (not shown) to facilitatetransfer of the substrate 201. The mask 301 may include openings (notshown) to align the mask 301 with the substrate 201 and mask supports311 coupled to one or more actuators 313 of a chamber body 309. The oneor more actuators 313 control movement of the mask supports 311 to alignthe mask 301 (or the first mask 315 and the second mask 317 of FIG. 3B)with the substrate 201. The mask 301 may also prevent deposition ofdevice material on edges 205 of the substrate 201 during operation 102.

In one embodiment, which can be combined with other embodimentsdescribed herein, the mask 301 is tape mask. The tape mask may include apolymer sheet, such as polyimide. The tape mask may be wound on a spool.At operation 102, the tape mask is feed through a feed mechanism thatbrings the tape in close contact with the substrate 201. A firstmechanism is used to attach the tape mask to the substrate 201, such asstatic electric charge or an adhesive. A second mechanism, such as aroller or picture frame, is used to place the tape mask onto thesubstrate 201 in a controlled fashion. In one embodiment, which can becombined with other embodiments described herein, the tape mask ispre-patterned before being wound onto the roll. In another embodiment,which can be combined with other embodiments described herein, a laserscribing station is used to create any of a variety of mask patterns.

In one embodiment, which can be combined with other embodimentsdescribed herein, operation 102, as shown in FIGS. 3B, 3C, and 3D,includes positioning a first mask 315 and a second mask 317 over thesubstrate 201 and depositing the device material. The depositing thedevice material may be performed with both the first mask 315 and thesecond mask 317 positioned over the substrate 201. The depositing thedevice material may be performed with the first mask 315 positioned overthe substrate 201 and subsequently with the second mask 317 positionedover the substrate 201. Utilizing the first mask 315 and the second mask317 forms the multi-depth film 200 including the base layer 202 havingthe base layer thickness 204 and one or more mandrels 208 having thefirst mandrel depth 210 and the second mandrel depth 211.

The first mask 315 includes a pattern of slots 314 disposed through thefirst mask 315. The pattern of slots 314 has a first masked depth 316.The pattern of slots 314 having the first masked depth 316 forms one ormore mandrels 208 having the first mandrel depth 210. The second mask317 includes a pattern of slots 318 disposed through the second mask317. The pattern of slots 318 has a second masked depth 320. The patternof slots 318 align with a portion of the pattern of slots 314. In oneembodiment, which can be combined with other embodiments describedherein, the pattern of slots 318 overlap with the portion of the patternof slots 314. The pattern of slots 318 aligned with the portion of thepattern of slots 314 forms one or more mandrels 208 having the secondmandrel depth 211. The first mask 315 and the second mask 317 mayinclude openings 319 to align the first mask 315 and the second mask 317with the substrate 201 and mask supports 311 coupled to one or moreactuators 313 of the chamber body 309.

In one embodiment, which can be combined with other embodimentsdescribed herein, a gantry system is used to pick at least one substrate201 from a conveyor belt and place each substrate 201 into a receivingarea of a clamshell mask applicator. The clamshell mask applicator maybe equipped with alignment capability and multiple masks (e.g., thefirst mask 315 and the second mask 317) may be aligned over thesubstrate 201. In one embodiment, which can be combined with otherembodiments described herein, a bottom mask (e.g., the first mask 315)may have features patterned thereon and blank off patches may be affixedto the bottom mask. The blank off patches may be removed sequentiallyduring the method 100.

FIG. 4 is a flow diagram of a method 400 for forming a multi-depth film500. FIGS. 5A-5C are schematic, cross-sectional views of a substrate 201during the method 400 for forming the multi-depth film 500.

At operation 401, a first patterned photoresist 502 is disposed over thebase layer 202 of the device material disposed on a surface 203 of asubstrate 201. The base layer 202 of the device material is disposed ona surface 203 of a substrate 201 as described in operation 101 of themethod 100. The first patterned photoresist 502 is formed by disposing aphotoresist material over the base layer 202 and performing alithography process. The first patterned photoresist 502 includes firstopenings 504 corresponding to one or more mandrels 208 to be formedhaving the first mandrel depth 210. The first patterned photoresist 502has a first thickness 506 corresponding to the first mandrel depth 210.

At operation 402, the device material is deposited over the firstpatterned photoresist 502 and the first patterned photoresist 502 isremoved to form one or more mandrels 208 having the first mandrel depth210. Removing the first patterned photoresist 502 may include alithography process or etching process. At operation 403, a secondpatterned photoresist 508 is disposed over the base layer 202 and theone or more mandrels 208 having the first mandrel depth 210. The secondpatterned photoresist 508 is formed by disposing a photoresist materialover the base layer 202 and performing a lithography process. The secondpatterned photoresist 508 includes second openings 512 aligning with aportion of the one or more mandrels 208 having the first mandrel depth210. The aligning second openings 512 with the portion of the one ormore mandrels 208 having the first mandrel depth 210 will form one ormore mandrels 208 having the second mandrel depth 211 after operation403. The second patterned photoresist 508 has a second thickness 510that combined with the first mandrel depth 210 corresponds to the secondmandrel depth 211.

At operation 404, the device material is deposited over the secondpatterned photoresist 508 and the second patterned photoresist 508 isremoved to form one or more mandrels 208 having the second mandrel depth211. Removing the second patterned photoresist 508 may include alithography process or etching process. Removing the second patternedphotoresist 508 forms the multi-depth film 500 that includes the baselayer 202 having the base layer thickness 204 and the one or moremandrels 208 having the first mandrel depth 210 and the second mandreldepth 211.

FIG. 6 is a schematic view of carrier assembly 600 according to oneembodiment. The carrier assembly 600 consists of carrier 601, thesubstrate 201, and the clamp ring or mask 301. The carrier assembly 600is used for supporting and transporting the substrate 201 duringprocessing. The carrier 601 supports the substrate 201 on the outeredges of the substrate as to not damage the backside of the substrate201. In one embodiment, the carrier 601 is a 300 mm carrier. In oneembodiment, the substrate 201 is a 200 mm substrate and the mask 301 isa 200 mm mask. In another embodiment, the substrate 201 is a 300 mmsubstrate and the mask is a 300 mm mask.

FIG. 7A is a schematic view of a processing system 700. The processingsystem 700 includes a transfer chamber 701 coupled to a load lock 702.It is to be understood that while two load locks 702 are shown in FIG.7A, it is contemplated that a single load lock 702 may be used or evenmore than two load locks 702 may be used. Thus, the embodimentsdiscussed herein are not to be limited to two load locks 702. Load locks702 are coupled to factory interface 704. Load port stations 705 arecoupled to factory interface 704. In one embodiment, as pictured in FIG.7A, four load port stations 705 are present. It is to be understood thatwhile four load port stations 705 are shown in FIG. 7A, it iscontemplated that any number of load port stations 705 may be used.Thus, the embodiments discussed herein are not to be limited to fourload port stations 705. In one embodiment, the process system 700 may bean etch process chamber. In another embodiment, the process system 700may be a PVD process chamber. The load port stations 705 will containone or more carrier assemblies 600. The carrier assemblies will beassembled at a location separate from the load portion stations 705 andthe factory interface 704.

The carrier assemblies 600 will be assembled in an offline build station703. Build station 703 is used to build and unbuild one or more carrierassemblies 600 in an automated form. Building a carrier assembly 600automatically is more efficient, both timely and costly, and preventspotential particle damage or breakage. Building a carrier assembly 600automatically also produces a higher quality product than if the carrierassembly 600 were to be built manually.

FIG. 7B is a detailed schematic view of the offline build station 703.The build station 703 is utilized to assemble the carrier assembly 600.The offline build station 703 has factory interface 704 and load portstations 705 a-705 d. Front opening unified pods (FOUPs) 801 a and 801 bare located at load port stations 705 a and 705 b, respectively. FOUP802 is located at load port station 705 d. Flipper device 803 is locatedat load port station 705 c. Two actuators 706 and 707 are disposedwithin the factory interface 704. In one embodiment, the actuator 706 isApplied Materials 300 mm SCARA Robot and actuator 707 is AppliedMaterials 200 mm SCARA Robot. Actuators 706 and 707 are independent ofone another. The actuators 706, 707 have actuator arms 708 and 709. Thearms 708, 709 enable the actuators 706, 707 to receive and transport thecomponents of carrier assembly 600. Vacuum chuck 710 and aligner 711 arepositioned at aligner station 900 between actuators 706, 707 in thefactory interface 704.

FIGS. 8A and 8B are cross-sectional views of FOUPs 801 and 802. FIG. 8Arepresents FOUP 801. FOUP 801 is loaded with carriers 601 and masks 301.FOUP 801 is a 300 mm FOUP. A generic FOUP is a cassette with twenty-fiveslots. FOUP 801 is skip-loaded utilizing every other slot of thetwenty-five slots. Slots 804 a-l represent loaded slots of FOUP 801.Slots 805 represent empty slots. Each FOUP 801 is loaded with twelvecarrier assemblies 600. FIG. 8B represents FOUP 802. FOUP 802 is loadedwith substrates 201. In one embodiment, FOUP 802 is a 300 mm FOUP. Inanother embodiment, FOUP 802 is a 200 mm substrate FOUP. FOUP 802 isloaded with twenty-four substrates 201.

Aligner 711 is utilized to orient mask 301, substrate 201, and carrier601 in the XY direction. Aligner 711 is capable of rotating 360 degrees.The aligner 711 rotates the mask 301, substrate 201, or carrier 601 tofind the center 712 of the mask 301, substrate 201, and carrier 601. Thealigner 711 is able to locate the center 712 of the mask 301, substrate201, or carrier 601 with accuracy of about 0.001 in. The aligner 711 iscapable of aligning either 200 mm substrates or 300 mm substrates. Inone embodiment, the mask 301, substrate 201, and carrier 601 are alignedby openings 319, as depicted in FIGS. 3C and 3D. As discussed below, thealigner 711 includes a vacuum chuck 710. The vacuum chuck 710 has innerregion 901 and outer region 902. Inner region 901 is configured to chucksubstrate 201. Outer region 902 is configured to chuck mask 301.

FIGS. 9A-9F are schematic, cross-sectional views of various stages of anexemplary embodiment of build station 703 building carrier assembly 600.FIG. 9A depicts the process beginning. The process begins by actuator706 extending actuator arms 708 into FOUP 801 a. It receives a mask 301and carrier 601 by extending arms 708 below carrier 601. The arms 708transport the mask 301 and carrier 601 to the aligner 711. Actuator 706places mask 301 and carrier 601 on aligner 711 and then actuator 706retracts arms 708. Aligner 711 aligns mask 301 and carrier 601. Actuator706 extends arms 708 under the now aligned mask 301 and carrier 601.Actuator arms 708 lift mask 301 and carrier 601 a distance 903 to vacuumchuck 710, as depicted in FIG. 9B. Distance 903 is a pre-calibrateddistance. Vacuum chuck 710 engages the outer region 902 and chucks mask301 to the vacuum chuck 710. With the mask 301 chucked to the vacuumchuck 710, actuator arms 708 lower the carrier 601, as depicted in FIG.9C. Once lowered, actuator arms 708 retract with carrier 601.

Actuator 707 extend actuator arms 709 into FOUP 802. Arms 709 receivesubstrate 201. Arms 709 transport the substrate 201 to the aligner 711.Actuator 707 retract arms 709 while aligner 711 aligns substrate 201.Arms 709 extend below the now aligned substrate 201, as depicted in FIG.9D. As depicted in FIG. 9E, arms 709 lift substrate 201 the distance 903to the vacuum chuck 710. Vacuum chuck 710 engages the inner region 901and chucks the substrate 201 to the vacuum chuck 710. Actuator arms 709now lower and retract. Actuator arms 708 now extend carrier 601. Arms708 lift carrier 601 the distance 903 to vacuum chuck 710. The innerregion 902 of vacuum chuck 710 release the substrate 201. The outerregion 901 of vacuum chuck 710 release the mask 301. As depicted in FIG.9F the now fully assembled carrier assembly 600 is lowered by arms 708.Actuator arms 708 retract carrier assembly 600 and return the fullcarrier assembly 600 to FOUP 801 a. Actuator arms 708 are now able toretrieve another mask 301 and carrier 601 assembly from FOUP 801 a.Moving in the downward direction 806, actuator arms retrieve the nextmask 301 and carrier 601 are received from the next slot. The buildprocess disclosed above is repeated until all assemblies of FOUP 801 aare complete. Once all assemblies 600 of FOUP 801 a are complete, theprocess is repeated for FOUP 801 b. The process depicted in FIGS. 9A-9Fresults in fully assembled carrier assemblies 600 in FOUPs 801 a and 801b.

The process disclosed above may also be completed without mask 301. Theprocess begins by actuator 706 extending actuator arms 708 into FOUP 801a. It receives a carrier 601 by extending arms 708 below carrier 601.The arms 708 transport the carrier 601 to the aligner 711. Actuator 706places carrier 601 on aligner 711 and then actuator 706 retracts arms708. Aligner 711 aligns carrier 601. Once aligned, actuator arms 708retract with carrier 601.

Actuator 707 extend actuator arms 709 into FOUP 802. Arms 709 receivesubstrate 201. Arms 709 transport the substrate 201 to the aligner 711.Actuator 707 retract arms 709 while aligner 711 aligns substrate 201.Arms 709 extend below the now aligned substrate 201. Arms 709 liftsubstrate 201 the distance 903 to the vacuum chuck 710. Vacuum chuck 710engages the inner region 901 and chucks the substrate 201 to the vacuumchuck 710. Actuator arms 709 now lower and retract. Actuator arms 708now extend carrier 601. Arms 708 lift carrier 601 the distance 903 tovacuum chuck 710. The inner region 902 of vacuum chuck 710 release thesubstrate 201. Substrate 201 and carrier 601 are lowered by arms 708.Actuator arms 708 retract substrate 201 and carrier 601 and return thesubstrate 201 and carrier 601 assembly to FOUP 801 a. Actuator arms 708are now able to retrieve another carrier 601 from FOUP 801 a. Moving inthe downward direction 806, actuator arms retrieve the next carrier 601from the next slot. The build process disclosed above is repeated untilall assemblies of FOUP 801 a are complete. Once all assemblies of FOUP801 a are complete, the process is repeated for FOUP 801 b. The processdisclosed above results in fully assembled substrate 201 and carrier 601assemblies in FOUPs 801 a and 801 b. It is to be understood that whilethe embodiment describes aligning the carrier 601, aligning thesubstrate 201, and then assembling the carrier 601 and substrate 201 asan assembly, aligning the substrate 201 may occur prior to aligning thecarrier 601 such that the substrate 201 is coupled to the vacuum chuck710 while the carrier 601 is aligned.

Often, a substrate 201 needs to be processed on the front side and thebackside. Flipper device 803 allows a substrate 201 to be flippedautomatically so that substrate 201 may be processed on the backside insubsequent processes. Actuator 706 extend arms 708 into FOUP 801 a andreceive a carrier assembly 600 from slot 804 a. Actuator arms 708 placecarrier assembly 600 on aligner 711. Actuator 706 retracts arms 708.Aligner 711 orients assembly 600. Arms 708 receive aligned assembly 600and lift assembly 600 predetermined distance 903 towards vacuum chuck710. Vacuum chuck 710 engages the inner region 901 to chuck substrate201 and outer region 902 to chuck mask 301. Leaving substrate 201 andmask 301 behind, arms 708 lower carrier 601. Actuator 706 retracts arms708 and carrier 601. Actuator 707 extends arms 709 below vacuum chuck710. Arms 708 lift distance 903 to receive substrate 201 on vacuum chuck710. Vacuum chuck 710 turns off region 901, releasing substrate 201.Arms 709 lower substrate 201. Actuator 707 extend arms 709 to placesubstrate 201 into flipper device 803. Actuator 707 retracts arms 709.Flipper device 803 flips substrate 201 180 degrees to the backside ofsubstrate 201. Arms 709 extend into flipper device 803 and receivesubstrate 201. Actuator arms 709 transport substrate 201 to aligner 711.Actuator 707 retracts arms 709 and aligner 711 aligns substrate 201.Arms 709 receive aligned substrate 201 and lift substrate 201 distance903 to vacuum chuck 710. Vacuum chuck 710 engages inner region 901 tochuck substrate 201. Actuator 707 lowers and retracts arms 709. Actuator706 extends arms 708 and carrier 601 below vacuum chuck 710. Arms 708lift carrier 601 to vacuum chuck 710. Vacuum chuck 710 disengages innerregion 901 and outer region 902 releasing substrate 201 and mask 301onto carrier 601. Actuator arms 708 lower the full carrier assembly 600.Actuator arms 708 extend into FOUP 801 a and place the full carrierassembly 600 back into slot 804 a. The build process disclosed above isrepeated until all assemblies of FOUP 801 a are complete. Once allassemblies 600 of FOUP 801 a are complete with flipped substrates 201,the process is repeated for FOUP 801 b. The process disclosed aboveresults in fully assembled carrier assemblies 600 with flippedsubstrates 201 in FOUPs 801 a and 801 b. The carrier assemblies 600 arethen ready to process substrates 201 on the backside. The processdisclosed above may also be completed without mask 301, resulting inassemblies with carrier 601 and flipped substrate 201.

In another embodiment, the build station 703 is utilized to unbuildcarrier assemblies 600. The mask 301 and carrier 601 are able to bereused for multiple processing sequences. The unbuild process beginswith FOUPs 801 a and 801 b loaded with complete carrier assemblies 600.In one embodiment, the substrate 201 has the front side processed. Inanother embodiment, the substrate 201 has the front side and back sideprocessed. The actuator arms 708 extend into FOUP 801 a and receive thecarrier assembly 600 from slot 808. Actuator arms 708 place carrierassembly 600 onto aligner 711. Actuator 706 retracts arms 708 andaligner 711 aligns assembly 600. Arms 708 extend to receive assembly600. Arms 708 raise assembly 600 distance 903 to vacuum chuck 710.Vacuum chuck 710 engages the inner region 901 to chuck the substrate 201and the outer region 902 to chuck the substrate 201. Actuator 706 thenlowers and retracts arms 708 with carrier 601. Actuator 707 extends arms709 below vacuum chuck 710. Arms 709 are lifted distance 903 tosubstrate 201 on vacuum chuck 710. Vacuum chuck 710 disengages the innerregion 901 releasing substrate 201 onto actuator arms 709. Actuator arms709 lower substrate 201 and extend into FOUP 802. The substrate 201 isplaced into the lowest slot 808 x of FOUP 802. Arms 708 then extendcarrier 601 below vacuum chuck 710. Arms 708 lift carrier 601 distance903 to vacuum chuck 710 to receive mask 301. Vacuum chuck 710 disengagesouter region 902 releasing mask 301 onto carrier 601. Actuator arms 708lower mask 301 and carrier 601 assembly and place mask 301 and carrier601 into slot 804L.

Once assemblies 600 of FOUP 801 a are fully unbuilt, the process isrepeated for FOUP 801 b. The process is repeated until all carrierassemblies 600 of FOUPs 801 a and 801 b have been unbuilt. The result ofthe unbuild process described above is FOUPs 801 a and 801 b loaded withmask 301 and carrier 601 and FOUP 802 loaded with processed substrates201. During the unbuild process, carrier assemblies 600 are unloadedfrom FOUPs 801 a and 801 b in direction 807 and substrates 201 areloaded into FOUP 802 in direction 807. The process disclosed above mayalso be completed without mask 301, resulting in carrier FOUPS 801 a and801 b loaded with carrier 601 and FOUP 802 loaded with processedsubstrates 201.

In one embodiment, a method comprises: disposing a base layer of adevice material on a surface of a substrate, the base layer having abase layer depth; and disposing one or more mandrels of the devicematerial on the base layer, wherein the disposing the one or moremandrels comprises: positioning a mask over of the base layer, the maskhaving: a first portion of a pattern of slots having a first maskeddepth, the first masked depth corresponding to mandrels having a firstmandrel depth; and a second portion of the pattern of slots having asecond masked depth, the second masked depth corresponding to mandrelshaving a second mandrel depth; and depositing the device material withthe mask positioned over the base layer to form an optical device havingthe base layer with the base layer depth and the one or more mandrelshaving the first mandrel depth and the second mandrel depth. The devicematerial is deposited by PVD. The device material is deposited by CVD.The device material is deposited by ALD. The mandrels comprise titaniumdioxide (TiO₂), zinc oxide (ZnO), tin dioxide (SnO₂), aluminum-dopedzinc oxide (AZO), fluorine-doped tin oxide (FTO), cadmium stannate (tinoxide) (CTO), and zinc stannate (tin oxide) (SnZnO₃), silicon nitride(Si₃N₄), and amorphous silicon (a-Si) containing materials. The firstmandrel depth is greater than the second mandrel depth. The first maskeddepth is greater than the second masked depth.

In another embodiment, a processing system comprises: a factoryinterface; a first actuator disposed within the factory interface; asecond actuator disposed within the factory interface; an alignerstation disposed within the factory interface; and a flipper devicecoupled to the factory interface. The factory interface comprises fourload port stations. The flipper device is coupled to the factoryinterface at a first load port station of the four load port stations.The aligner is disposed between the first actuator and the secondactuator. The aligner station comprises a vacuum chuck. The vacuum chuckcomprises an inner region for chucking substrates and an outer regionfor separately chucking masks. The aligner station comprises an aligner.

In another embodiment, a method of assembling a carrier assemblycomprises: inserting a carrier having a mask thereon into an alignmentstation; aligning the carrier and mask; separating the mask from thecarrier; removing the carrier from the alignment station; inserting asubstrate into the alignment station; contacting the substrate to themask; and contacting the carrier to the substrate and mask to create acarrier assembly. Separating the mask from the carrier comprises movingthe mask to a vacuum chuck and chucking the mask to the vacuum chuck.Contacting the substrate to the mask comprises moving the substrate to avacuum chuck and chucking the substrate to the vacuum chuck. Contactingthe carrier to the substrate and the mask comprises unchucking thesubstrate and the mask from a vacuum chuck. The method further comprisesinserting the carrier into the alignment station after contacting thesubstrate to the mask. At least a portion of the mask and the substraterest within the carrier.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A method, comprising: disposing a base layer of adevice material on a surface of a substrate, the base layer having abase layer depth; and disposing mandrels of the device material on thebase layer, wherein the disposing the mandrels comprises: co-forming themandrels by positing a mask over the base layer, the mask having: afirst portion of a pattern of slots having a first masked depth, thefirst masked depth corresponding to one or more mandrels having a firstmandrel depth; and a second portion of the pattern of slots having asecond masked depth, the second masked depth corresponding to one ormore mandrels having a second mandrel depth, wherein the first maskeddepth is greater than the second masked depth such that the firstmandrel depth is greater than the second mandrel depth; and depositingthe device material with the mask positioned over the base layer to forman optical device having the base layer with the base layer depth andthe one or more mandrels having the first mandrel depth and the one ormore mandrels having the second mandrel depth, wherein the first mandreldepth is greater than the second mandrel depth.
 2. The method of claim1, wherein the device material is deposited by physical vapor deposition(PVD).
 3. The method of claim 1, wherein the device material isdeposited by chemical vapor deposition (CVD).
 4. The method of claim 1,wherein the device material is deposited by atomic layer deposition(ALD).
 5. The method of claim 1, wherein the mandrels comprise titaniumdioxide (TiO₂), zinc oxide (ZnO), tin dioxide (SnO₂), aluminum-dopedzinc oxide (AZO), fluorine-doped tin oxide (FTO), cadmium stannate (tinoxide) (CTO), and zinc stannate aluminum-doped zinc oxide (AZO),fluorine-doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), zincstannate (tin oxide) (SnZnQ3), silicon nitride (Si3N4), or amorphoussilicon (a-Si) containing materials.
 6. The method of claim 1, whereinthe device material of the one or more mandrels having the first mandreldepth is the same device material as the one or more mandrels having thesecond mandrel depth.